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Ultra-high density semiconductor type single-walled carbon nanotube horizontal array

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Ultra-high density semiconductor type single-walled carbon nanotube horizontal array

October 20,2018.

ChinaPeking Universitycooperate with Chinese Academy of Sciencesto use ethanol / methanebychemical vapor deposition method to get ultrahigh-density semiconductor array level of single-walled carbon nanotube.

Nowadays, as electronic devices become smaller and smaller, silicon transistors have reached the bottleneck of their development. The horizontal array ofsingle-walled carbon nanotubesis regarded as the most powerful successor of future transistors due to its excellent performance. At present, obtaining high-purity, high-density horizontal arrays of single-walled carbon nanotubes is a major challenge for researchers. Although the direct formation of horizontal arrays ofsingle-walled carbon nanotubeson a substrate by chemical vapor deposition is an effective method for realizing high-performance electronic devices, conventional chemical vapor deposition is extremely active due to the generated methane plasma and ultra-high temperature hydrogen atoms. It is difficult to control, and usually results in a low yield of semiconductor-typecarbon nanotubes.


Recently, researchers from Peking University and the Chinese Academy of Sciences reported a ethanol / methane chemical vapor deposition of the scientific method to preparesingle-walled carbon nanotube array level. SWNT horizontal array prepared by the method of a semiconductor single-walled carbon nanotube purity of 91% and a density higher than 100 tubes / μm. This method is at a certain temperature, thermal decomposition of ethanol is completely for Trojan-Mo catalyst to provide a carbon atom to generate a high-densitysingle wall carbon nanotubes; and incomplete thermal decomposition of methane is used to provide the free H base metal to prevent the formation of single-walled carbon nanotubes. Ethanol and methane moderate activity, vital high controllability, and the synergistic effect of both high purity and high-density semiconductor single-walled carbon nanotube growth. The study was a large area of high-densitysingle-walled carbon nanotubesynthesis horizontal array of a step forward, showing the potential applications of carbon nanotube electronics.


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